HSBD139 NPN Transistor

The HSBD139 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HSBD139 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSBD139 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HSBD139 transistor as follows.

HSBD139 Transistor Specification

Transistor Code		HSBD139
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	12.5W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	80V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		40

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