HSB857J PNP Transistor

The HSB857J is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSB857J transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSB857J transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSB857J transistor as follows.

HSB857J Transistor Specification

Transistor Code		HSB857J
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-252
Collector Power Dissipation (Maximum)	PC	20W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		170
Transition Frequency	FT	15MHz

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