HSB1109S PNP Transistor

The HSB1109S is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HSB1109S transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HSB1109S transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HSB1109S transistor as follows.

HSB1109S Transistor Specification

Transistor Code		HSB1109S
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	0.9W
Collector-Base Voltage (Maximum)	VCB	160V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	140MHz
Collector Capacitance	CC	5.5pF

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