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HS6012 NPN Transistor

The HS6012 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HS6012 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HS6012 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HS6012 transistor as follows.

Circuit diagram symbol of the HS6012 transistor

HS6012 Transistor Specification

Transistor Code HS6012
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X55-1
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 40V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 50
Transition Frequency FT 240MHz
Collector Capacitance CC 10pF

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