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HS5820 NPN Transistor

The HS5820 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HS5820 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HS5820 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HS5820 transistor as follows.

Circuit diagram symbol of the HS5820 transistor

HS5820 Transistor Specification

Transistor Code HS5820
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package X55-1
Collector Power Dissipation (Maximum) PC 0.5W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 0.75A
Operating Junction Temperature (Maximum) TJ 135°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 100MHz
Collector Capacitance CC 15pF

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