HS5306 NPN Transistor

The HS5306 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HS5306 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HS5306 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HS5306 transistor as follows.

HS5306 Transistor Specification

Transistor Code		HS5306
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO98-3
Collector Power Dissipation (Maximum)	PC	0.4W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	12V
Forward Current Transfer Ratio (hFE Value)		7000
Transition Frequency	FT	60MHz
Collector Capacitance	CC	10pF

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More Transistors Datasheets in TO98-3 Package

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