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HPA251R NPN Transistor

The HPA251R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HPA251R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HPA251R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HPA251R transistor as follows.

Circuit diagram symbol of the HPA251R transistor

HPA251R Transistor Specification

Transistor Code HPA251R
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3JML
Collector Power Dissipation (Maximum) PC 120W
Collector-Base Voltage (Maximum) VCB 1500V
Collector-Emitter Voltage (Maximum) VCE 800V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 4

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More Transistors Datasheets in TO3JML Package

HPA251R-2 HPA251R-2 NPN Transistor HPA251R-4 HPA251R-4 NPN Transistor HPA251R-3 HPA251R-3 NPN Transistor