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HN4C08J NPN Transistor

The HN4C08J is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN4C08J transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN4C08J transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN4C08J transistor as follows.

Circuit diagram symbol of the HN4C08J transistor

HN4C08J Transistor Specification

Transistor Code HN4C08J
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SMV
Transistor SMD Code 35
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 120MHz
Collector Capacitance CC 13pF

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More Transistors Datasheets in SMV Package

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