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HN4C05JU NPN Transistor

The HN4C05JU is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN4C05JU transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN4C05JU transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN4C05JU transistor as follows.

Circuit diagram symbol of the HN4C05JU transistor

HN4C05JU Transistor Specification

Transistor Code HN4C05JU
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package USV
Transistor SMD Code NA_NB
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.4A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 300
Transition Frequency FT 80MHz
Collector Capacitance CC 4.2pF

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