HN3C51F NPN Transistor

The HN3C51F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN3C51F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN3C51F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN3C51F transistor as follows.

HN3C51F Transistor Specification

Transistor Code		HN3C51F
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SM6
Transistor SMD Code		DG_DL
Collector Power Dissipation (Maximum)	PC	0.3W
Collector-Base Voltage (Maximum)	VCB	120V
Collector-Emitter Voltage (Maximum)	VCE	120V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Transition Frequency	FT	100MHz
Collector Capacitance	CC	3pF

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