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HN1C07F NPN Transistor

The HN1C07F is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN1C07F transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN1C07F transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN1C07F transistor as follows.

Circuit diagram symbol of the HN1C07F transistor

HN1C07F Transistor Specification

Transistor Code HN1C07F
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SM6
Transistor SMD Code 46
Collector Power Dissipation (Maximum) PC 0.3W
Collector-Base Voltage (Maximum) VCB 50V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 70
Transition Frequency FT 300MHz
Collector Capacitance CC 7pF

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