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HN1C05FE NPN Transistor

The HN1C05FE is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN1C05FE transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN1C05FE transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN1C05FE transistor as follows.

Circuit diagram symbol of the HN1C05FE transistor

HN1C05FE Transistor Specification

Transistor Code HN1C05FE
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package ES6
Transistor SMD Code FA_FB
Collector Power Dissipation (Maximum) PC 0.1W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 0.4A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 300
Transition Frequency FT 130MHz
Collector Capacitance CC 4.2pF

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More Transistors Datasheets in ES6 Package

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