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HN1C01FU NPN Transistor

The HN1C01FU is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HN1C01FU transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN1C01FU transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HN1C01FU transistor as follows.

Circuit diagram symbol of the HN1C01FU transistor

HN1C01FU Transistor Specification

Transistor Code HN1C01FU
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package US6
Transistor SMD Code C1G_C1Y
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 0.15A
Operating Junction Temperature (Maximum) TJ 125°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 120
Transition Frequency FT 80MHz
Collector Capacitance CC 2pF

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