HN1A01FU PNP Transistor

The HN1A01FU is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HN1A01FU transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HN1A01FU transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HN1A01FU transistor as follows.

HN1A01FU Transistor Specification

Transistor Code		HN1A01FU
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		US6
Transistor SMD Code		D1G_D1Y
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	50V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	125°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	80MHz
Collector Capacitance	CC	4pF

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