HMBTA13 NPN Transistor

The HMBTA13 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMBTA13 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMBTA13 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMBTA13 transistor as follows.

HMBTA13 Transistor Specification

Transistor Code		HMBTA13
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	10V
Forward Current Transfer Ratio (hFE Value)		10000
Transition Frequency	FT	125MHz
Collector Capacitance	CC	6pF

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