HMBT2369 NPN Transistor

The HMBT2369 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMBT2369 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMBT2369 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMBT2369 transistor as follows.

HMBT2369 Transistor Specification

Transistor Code		HMBT2369
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4.5V
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	500MHz
Collector Capacitance	CC	4pF

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