HMBT1815 NPN Transistor

The HMBT1815 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMBT1815 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMBT1815 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMBT1815 transistor as follows.

HMBT1815 Transistor Specification

Transistor Code		HMBT1815
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	80MHz
Collector Capacitance	CC	3.5pF

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