HM965 NPN Transistor

The HM965 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HM965 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HM965 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HM965 transistor as follows.

HM965 Transistor Specification

Transistor Code		HM965
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-89
Collector Power Dissipation (Maximum)	PC	1.2W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		340
Transition Frequency	FT	150MHz
Collector Capacitance	CC	50pF

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