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HLB122I NPN Transistor

The HLB122I is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HLB122I transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HLB122I transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HLB122I transistor as follows.

Circuit diagram symbol of the HLB122I transistor

HLB122I Transistor Specification

Transistor Code HLB122I
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-251
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 600V
Collector-Emitter Voltage (Maximum) VCE 400V
Collector Current (Maximum) IC 0.8A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 10

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More Transistors Datasheets in TO-251 Package

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