HIT5609 NPN Transistor

The HIT5609 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HIT5609 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HIT5609 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HIT5609 transistor as follows.

HIT5609 Transistor Specification

Transistor Code		HIT5609
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92LM
Collector Power Dissipation (Maximum)	PC	0.9W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	80MHz
Collector Capacitance	CC	15pF

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