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HI669A NPN Transistor

The HI669A is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HI669A transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HI669A transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HI669A transistor as follows.

Circuit diagram symbol of the HI669A transistor

HI669A Transistor Specification

Transistor Code HI669A
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO-251
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 60
Transition Frequency FT 140MHz
Collector Capacitance CC 14pF

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