HEPS9101 NPN Transistor

The HEPS9101 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS9101 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS9101 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS9101 transistor as follows.

HEPS9101 Transistor Specification

Transistor Code		HEPS9101
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO126
Collector Power Dissipation (Maximum)	PC	40W
Collector-Base Voltage (Maximum)	VCB	60V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		750
Transition Frequency	FT	2MHz

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