HEPS9100 NPN Transistor

The HEPS9100 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS9100 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS9100 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS9100 transistor as follows.

HEPS9100 Transistor Specification

Transistor Code		HEPS9100
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.5W
Collector-Base Voltage (Maximum)	VCB	30V
Collector Current (Maximum)	IC	0.3A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		20000
Transition Frequency	FT	200MHz

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