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HEPS7008 NPN Transistor

The HEPS7008 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS7008 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS7008 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS7008 transistor as follows.

Circuit diagram symbol of the HEPS7008 transistor

HEPS7008 Transistor Specification

Transistor Code HEPS7008
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 200W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 80V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 2MHz

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