HEPS7006 NPN Transistor

The HEPS7006 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS7006 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS7006 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS7006 transistor as follows.

HEPS7006 Transistor Specification

Transistor Code		HEPS7006
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	150V
Collector-Emitter Voltage (Maximum)	VCE	750V
Collector Current (Maximum)	IC	5A
Operating Junction Temperature (Maximum)	TJ	175°C
Transition Frequency	FT	7.5MHz

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