HEPS5026 NPN Transistor

The HEPS5026 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS5026 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5026 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS5026 transistor as follows.

HEPS5026 Transistor Specification

Transistor Code		HEPS5026
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		35
Transition Frequency	FT	15MHz

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