HEPS5022R PNP Transistor

The HEPS5022R is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS5022R transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5022R transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS5022R transistor as follows.

HEPS5022R Transistor Specification

Transistor Code		HEPS5022R
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	1.8W
Collector-Base Voltage (Maximum)	VCB	60V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		85
Transition Frequency	FT	275MHz

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