HEPS5020 NPN Transistor

The HEPS5020 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS5020 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5020 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS5020 transistor as follows.

HEPS5020 Transistor Specification

Transistor Code		HEPS5020
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	125W
Collector-Base Voltage (Maximum)	VCB	400V
Collector-Emitter Voltage (Maximum)	VCE	325V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	2.5MHz

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