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HEPS5015 NPN Transistor

The HEPS5015 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS5015 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5015 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS5015 transistor as follows.

Circuit diagram symbol of the HEPS5015 transistor

HEPS5015 Transistor Specification

Transistor Code HEPS5015
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO126
Collector Power Dissipation (Maximum) PC 20W
Collector-Base Voltage (Maximum) VCB 300V
Collector-Emitter Voltage (Maximum) VCE 300V
Collector Current (Maximum) IC 0.5A
Operating Junction Temperature (Maximum) TJ 140°C
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 15MHz

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