HEPS5013 PNP Transistor

The HEPS5013 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS5013 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS5013 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS5013 transistor as follows.

HEPS5013 Transistor Specification

Transistor Code		HEPS5013
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO5
Collector Power Dissipation (Maximum)	PC	6W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	40V
Collector Current (Maximum)	IC	3A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		85
Transition Frequency	FT	4MHz

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