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HEPS3061 NPN Transistor

The HEPS3061 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3061 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3061 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3061 transistor as follows.

Circuit diagram symbol of the HEPS3061 transistor

HEPS3061 Transistor Specification

Transistor Code HEPS3061
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO220
Collector Power Dissipation (Maximum) PC 65W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 6A
Operating Junction Temperature (Maximum) TJ 140°C
Forward Current Transfer Ratio (hFE Value) 40
Transition Frequency FT 3MHz

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