HEPS3055 PNP Transistor

The HEPS3055 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS3055 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3055 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS3055 transistor as follows.

HEPS3055 Transistor Specification

Transistor Code		HEPS3055
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO220
Collector Power Dissipation (Maximum)	PC	65W
Collector-Base Voltage (Maximum)	VCB	100V
Collector-Emitter Voltage (Maximum)	VCE	100V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		40
Transition Frequency	FT	3MHz

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