HEPS3050 PNP Transistor

The HEPS3050 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS3050 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3050 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS3050 transistor as follows.

HEPS3050 Transistor Specification

Transistor Code		HEPS3050
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO202
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	140°C
Forward Current Transfer Ratio (hFE Value)		150
Transition Frequency	FT	150MHz

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