HEPS3035 NPN Transistor

The HEPS3035 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3035 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3035 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3035 transistor as follows.

HEPS3035 Transistor Specification

Transistor Code		HEPS3035
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	270V
Collector-Emitter Voltage (Maximum)	VCE	270V
Collector Current (Maximum)	IC	0.05A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		35
Transition Frequency	FT	150MHz

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