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HEPS3032 PNP Transistor

The HEPS3032 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPS3032 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3032 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPS3032 transistor as follows.

Circuit diagram symbol of the HEPS3032 transistor

HEPS3032 Transistor Specification

Transistor Code HEPS3032
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SIPTAB
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 140°C
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 100MHz

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More Transistors Datasheets in SIPTAB Package

HEPS3021 HEPS3021 NPN Transistor HEPS3024 HEPS3024 NPN Transistor HEPS3028 HEPS3028 PNP Transistor