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HEPS3020 NPN Transistor

The HEPS3020 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3020 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3020 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3020 transistor as follows.

Circuit diagram symbol of the HEPS3020 transistor

HEPS3020 Transistor Specification

Transistor Code HEPS3020
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SIPT
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 60V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 150MHz

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More Transistors Datasheets in SIPT Package

HEPS3019 HEPS3019 NPN Transistor