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HEPS3011 NPN Transistor

The HEPS3011 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3011 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3011 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3011 transistor as follows.

Circuit diagram symbol of the HEPS3011 transistor

HEPS3011 Transistor Specification

Transistor Code HEPS3011
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO39
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 80V
Collector-Emitter Voltage (Maximum) VCE 50V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 100
Transition Frequency FT 100MHz

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