HEPS3011 NPN Transistor

The HEPS3011 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3011 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3011 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3011 transistor as follows.

HEPS3011 Transistor Specification

Transistor Code		HEPS3011
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO39
Collector Power Dissipation (Maximum)	PC	1W
Collector-Base Voltage (Maximum)	VCB	80V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	100MHz

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