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HEPS3010 NPN Transistor

The HEPS3010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3010 transistor as follows.

Circuit diagram symbol of the HEPS3010 transistor

HEPS3010 Transistor Specification

Transistor Code HEPS3010
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO3
Collector Power Dissipation (Maximum) PC 10W
Collector-Base Voltage (Maximum) VCB 70V
Collector-Emitter Voltage (Maximum) VCE 60V
Collector Current (Maximum) IC 4A
Operating Junction Temperature (Maximum) TJ 175°C
Forward Current Transfer Ratio (hFE Value) 20
Transition Frequency FT 30MHz

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