HEPS3010 NPN Transistor

The HEPS3010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3010 transistor as follows.

HEPS3010 Transistor Specification

Transistor Code		HEPS3010
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO3
Collector Power Dissipation (Maximum)	PC	10W
Collector-Base Voltage (Maximum)	VCB	70V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	4A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		20
Transition Frequency	FT	30MHz

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