HEPS3009 NPN Transistor

The HEPS3009 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS3009 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS3009 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS3009 transistor as follows.

HEPS3009 Transistor Specification

Transistor Code		HEPS3009
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		M122
Collector Power Dissipation (Maximum)	PC	80W
Collector-Base Voltage (Maximum)	VCB	36V
Collector-Emitter Voltage (Maximum)	VCE	36V
Collector Current (Maximum)	IC	6A
Operating Junction Temperature (Maximum)	TJ	175°C
Forward Current Transfer Ratio (hFE Value)		10
Transition Frequency	FT	175MHz

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