HEPS0010 NPN Transistor

The HEPS0010 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HEPS0010 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPS0010 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HEPS0010 transistor as follows.

HEPS0010 Transistor Specification

Transistor Code		HEPS0010
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO92
Collector Power Dissipation (Maximum)	PC	0.35W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.02A
Operating Junction Temperature (Maximum)	TJ	150°C
Forward Current Transfer Ratio (hFE Value)		75
Transition Frequency	FT	800MHz

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