HEPG0006 PNP Transistor

The HEPG0006 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEPG0006 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEPG0006 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEPG0006 transistor as follows.

HEPG0006 Transistor Specification

Transistor Code		HEPG0006
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO5
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	25V
Collector Current (Maximum)	IC	0.2A
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	2MHz

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