HEP637 PNP Transistor

The HEP637 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEP637 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEP637 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEP637 transistor as follows.

HEP637 Transistor Specification

Transistor Code		HEP637
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Germanium(GE)
Package		TO72
Collector Power Dissipation (Maximum)	PC	0.15W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	15V
Collector Current (Maximum)	IC	0.01A
Operating Junction Temperature (Maximum)	TJ	100°C
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	800MHz

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