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HEP32C PNP Transistor

The HEP32C is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HEP32C transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HEP32C transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HEP32C transistor as follows.

Circuit diagram symbol of the HEP32C transistor

HEP32C Transistor Specification

Transistor Code HEP32C
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package TO220AB
Collector Power Dissipation (Maximum) PC 40W
Collector-Base Voltage (Maximum) VCB 100V
Collector-Emitter Voltage (Maximum) VCE 100V
Collector Current (Maximum) IC 3A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 10
Transition Frequency FT 3MHz

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