The HE8551 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HE8551 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.
The HE8551 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.
Circuit diagram symbol of the HE8551 transistor as follows.
| Transistor Code | HE8551 | |
|---|---|---|
| Transistor Type | BJT | |
| Transistor Polarity | PNP | |
| Transistor Material | Silicon(SI) | |
| Package | TO-92NL TO-92 | |
| Collector Power Dissipation (Maximum) | PC | 0.9W |
| Collector-Base Voltage (Maximum) | VCB | 40V |
| Collector-Emitter Voltage (Maximum) | VCE | 25V |
| Collector Current (Maximum) | IC | 1.5A |
| Operating Junction Temperature (Maximum) | TJ | 150°C |
| Emitter-Base Voltage (Maximum) | VEB | 6V |
| Forward Current Transfer Ratio (hFE Value) | 85 | |
| Transition Frequency | FT | 100MHz |
| Collector Capacitance | CC | 9pF |
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