HE8550S PNP Transistor

The HE8550S is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the HE8550S transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HE8550S transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the HE8550S transistor as follows.

HE8550S Transistor Specification

Transistor Code		HE8550S
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		TO-92
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	0.7A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	150MHz
Collector Capacitance	CC	10pF

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