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HD965 NPN Transistor

The HD965 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HD965 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HD965 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HD965 transistor as follows.

Circuit diagram symbol of the HD965 transistor

HD965 Transistor Specification

Transistor Code HD965
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 20V
Collector Current (Maximum) IC 5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 7V
Forward Current Transfer Ratio (hFE Value) 180
Transition Frequency FT 150MHz
Collector Capacitance CC 50pF

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