HBN3101S6R NPN Transistor

The HBN3101S6R is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HBN3101S6R transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HBN3101S6R transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HBN3101S6R transistor as follows.

HBN3101S6R Transistor Specification

Transistor Code		HBN3101S6R
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-363
Transistor SMD Code		K4N
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	300V
Collector-Emitter Voltage (Maximum)	VCE	300V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		100
Transition Frequency	FT	60MHz
Collector Capacitance	CC	15pF

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