HA21G NPN Transistor

The HA21G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HA21G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HA21G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HA21G transistor as follows.

HA21G Transistor Specification

Transistor Code		HA21G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		TO237
Collector Power Dissipation (Maximum)	PC	0.75W
Collector-Base Voltage (Maximum)	VCB	25V
Collector-Emitter Voltage (Maximum)	VCE	20V
Collector Current (Maximum)	IC	1.5A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		68
Transition Frequency	FT	50MHz
Collector Capacitance	CC	1pF

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