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H8050 NPN Transistor

The H8050 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H8050 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H8050 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H8050 transistor as follows.

Circuit diagram symbol of the H8050 transistor

H8050 Transistor Specification

Transistor Code H8050
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT89
Transistor SMD Code 8050B_8050C_8050D_8050D3
Collector Power Dissipation (Maximum) PC 1W
Collector-Base Voltage (Maximum) VCB 40V
Collector-Emitter Voltage (Maximum) VCE 25V
Collector Current (Maximum) IC 1.5A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 85
Transition Frequency FT 100MHz
Collector Capacitance CC 15pF

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