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H3279 NPN Transistor

The H3279 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the H3279 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The H3279 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the H3279 transistor as follows.

Circuit diagram symbol of the H3279 transistor

H3279 Transistor Specification

Transistor Code H3279
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package TO92
Collector Power Dissipation (Maximum) PC 0.75W
Collector-Base Voltage (Maximum) VCB 30V
Collector-Emitter Voltage (Maximum) VCE 10V
Collector Current (Maximum) IC 2A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 6V
Forward Current Transfer Ratio (hFE Value) 140
Transition Frequency FT 150(TYP)MHz
Collector Capacitance CC 27pF

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